Overall
Wafer** |
| |
Material: Silicon-On-Insulator wafers |
Material: Silicon-On-Insulator wafers |
| Diameter: |
100 ± 0.5mm |
100 ± 0.5mm |
| Primary Flat: |
<110> ± 0.5° |
<110> ± 0.5° |
| Length: |
32.5 ± 2.5mm |
32.5 ± 2.5mm |
| Secondary Flat: |
SEMI Std |
SEMI Std |
| Total Thickness Variation: |
< 3µm
|
< 3µm |
| Bow: |
< 80µm |
< 80µm |
| Warp: |
< 80µm |
< 80µm |
Handle
Wafer**
|
| Type/Dopant: |
P/Boron/CZ |
N/Phos/CZ |
| Orientation: |
(100) ± 1° |
(100) ± 1° |
| Resistivity: |
1-10 ohm-cm |
1-30 ohm-cm |
| Thickness: |
450 ± 5µm |
500 ± 5µm |
| Backside Finish: |
Polished with no
Oxide or
Laser Mark |
Polished with no
Oxide or
Laser Mark |
BOX**
|
| Growth Type: |
Thermal |
Thermal |
| Thickness: |
10,000 ± 500Å |
10,000 ± 500Å |
| Grown on: |
Handle Wafer |
Handle Wafer |
Device
Layer**
|
| Type/Dopant: |
P/Boron/CZ |
N/Phos/CZ |
| Orientation: |
(100) ± 1° |
(100) ± 1° |
| Resistivity: |
1-10 ohm-cm |
1-30 ohm-cm |
| Thickness: |
2 - 10µm ± 0.5µm
> 10 - 400µm ± 1µm |
2 - 10µm ± 0.5µm
> 10 - 400µm ± 1µm |
| Distance to device edge from silicon
wafer edge: |
< 5mm |
< 5mm |
| Voids: |
None |
None |
